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m to 500 mΩ
*Photos include both Original and Plus models
10-Bis(2-naphthyl)anthracene (ADN)
Plus improved aerodynamics and mechanical performance produce more uniform films
PhysRe Lett
Gate Deposition Mask, High Density Design Type:Gate Deposition Mask - Interdigitated Channel HD OFETs m to 500 mΩHigh Density Gate Deposition Mask Enabling accurate deposition resolution An evaporation mask for deposition of gate contacts, for use with the high density OFET system. A 100 m standoff spacer ensures that the mask does not touch the substrate while still enabling good deposition resolution. Mask with direct contact (no spacer): For sputtering and other non directional deposition systems, as well as for thermal deposition systems with oblique angles
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